r07ds0158ej0400 rev.4.00 page 1 of 9 apr 19, 2012 preliminary datasheet rjh60d1dpp-m0 600v - 10a - igbt application: inverter features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.9 v typ. (at i c = 10 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (70 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 75 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 10 a, rg = 5 ? , inductive load) outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 3 1. gate 2. collector 3. emitter c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c 20 a collector current tc = 100c i c 10 a collector peak current ic(peak) note1 40 a collector to emitter diode forward current i df 10 a collector to emitter diode forward peak current i d (peak) note1 40 a collector dissipation p c note2 30 w junction to case the rmal resistance (igbt) ? j-c note2 4.1 c/ w junction to case thermal resistance (diode) ? j-cd note2 7.2 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0158ej0400 rev.4.00 apr 19, 2012
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 2 of 9 apr 19, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v br(ces) 600 ? ? v ? i c =10 ? a, v ge = 0 zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.9 2.5 v i c = 10 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.6 ? v i c = 20 a, v ge = 15 v note3 input capacitance cies ? 275 ? pf output capacitance coes ? 25 ? pf reveres transfer capacitance cres ? 8 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 13 ? nc gate to emitter charge qge ? 3 ? nc gate to collector charge qgc ? 5 ? nc v ge = 15 v v ce = 300 v i c = 10 a turn-on delay time t d(on) ? 30 ? ns rise time t r ? 13 ? ns turn-off delay time t d(off) ? 42 ? ns fall time t f ? 75 ? ns turn-on energy e on ? 0.10 ? mj ? turn-off energy e off ? 0.13 ? mj ? total switching energy e total ? 0.23 ? mj ? v cc = 300 v v ge = 15 v i c = 10 a rg = 5 ?? (inductive load) short circuit withstand time t sc 3.0 5.0 ? ? s v ge ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 10 a note3 frd reverse recovery time t rr ? 70 ? ns frd reverse recovery charge q rr ? 0.11 ? ? c frd peak reverse recovery current i rr ? 3.5 ? a i f = 10 a di f /dt = 100 a/ ? s notes: 3. pulse test.
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 3 of 9 apr 19, 2012 main characteristics collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 30 20 15 10 5 0 02550 100 75 125 150 175 collector current i c (a) collector to emitter voltage v ce (v) turn-off soa 0 200 400 600 800 collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 25 60 50 40 30 20 10 0 collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area 21 034 5 0 40 30 20 10 igbt output characteristics (typical) collector current i c (a) collector to emitter voltage v ce (v) 0 40 30 20 10 igbt output characteristics (typical) collector current i c (a) collector to emitter voltage v ce (v) v ge = 8 v 10 v 12 v 15 v 18 v 21 034 5 tc = 2 5 c pulse test tc = 150 c pulse test v ge = 8 v 15 v 10 v 12 v 18 v 100 10 0.1 1 0.01 11 0 0 10 1000 tc = 25c single pulse 100 s pw = 10 s 02550 100 75 125 150 175 40 30 20 10 0
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 4 of 9 apr 19, 2012 4.0 3.0 2.0 3.5 2.5 1.5 1.0 ? 25 0 25 75 125 50 100 150 10 a 5 a i c = 20 a v ge = 15 v pulse test 0 40 30 20 10 04812 20 16 v ce = 10 v pulse test tc = 2 5 c 150 c 10 8 6 4 2 0 typical transfer characteristics collector current i c (a) gate to emitter voltage v ge (v) collector to emitter saturation voltage vs. case temparature (typical) collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc (c) 1 ma i c = 10 ma 5 4 3 2 1 0 frequency characteristics (typical) collector current i c(rsm) (a) frequency f (khz) 11 0 0 10 1000 tj = 125c, tc = 90c v ce = 400 v, v ge = 15 v rg = 5 , duty = 50% 0 collector current wave (square wave) 1 3 2 4 5 4812 20 16 tc = 2 5 c pulse test i c = 20 a 10 a 5 a 1 3 2 4 5 4 8 12 20 16 tc = 150 c pulse test i c = 20 a 10 a 5 a
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 5 of 9 apr 19, 2012 1000 10 100 1 switching characteristics (typical) (1) collector current i c (a) (inductive load) switching times t (ns) 1 10 100 1 10 100 switching characteristics (typical) (3) t d(on) gate resistance rg () (inductive load) switching time t (ns) 10 100 1000 v cc = 300 v, v ge = 15 v i c = 10 a, tc = 150 c t f t d(off) t r 10 100 1000 5025 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v i c = 10 a, rg = 5 t f t d(off) t r v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r 1 0.1 0.01 1 0.01 0.1 10 0.1 1 0.01 11 0 100 gate registance rg () (inductive load) eoff eon swithing energy losses e (mj) switching characteristics (typical) (4) v cc = 300 v, v ge = 15 v i c = 10 a, tc = 150 c eoff eon v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c swithing energy losses e (mj) collector current i c (a) (inductive load) switching characteristics (typical) (2) 11 0 100 5025 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c =10 a, rg = 5
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 6 of 9 apr 19, 2012 048 20 12 16 gate charge qg (nc) dynamic input characteristics (typical) 800 600 400 200 0 16 12 8 4 0 v cc = 300 v i c = 10 a tc = 25 c v ge v ce collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) capacitance c (pf) 1 10 100 1000 0100 50 150 200 250 300 typical capacitance vs. collector to emitter voltage collector to emitter voltage v ce (v) cies coes cres v ge = 0 v f = 1 mhz tc = 25 c 0.5 0.4 0.3 0.2 0.1 diode current slope di f /dt (a/s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) 100 50 300 250 200 150 0 04080 200 120 160 04080 200 120 160 04080 200 120 160 v cc = 300 v i f = 10 a tc = 150 c 25 c diode current slope di f /dt (a/s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) diode current slope di f /dt (a/s) reverse recovery charge q rr (c) reverse recovery charge vs. diode current slope (typical) 0 v cc = 300 v i f = 10 a tc = 150 c 25 c 12 8 4 16 0 v cc = 300 v i f = 10 a tc = 150 c 25 c c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) forward current i f (a) 0 40 30 20 10 0123 4 tc = 2 5 c 150 c v ce = 0 v pulse test
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 7 of 9 apr 19, 2012 0.01 0.1 10 1 100 1 m 10 m 100 m 1 10 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.1c/w, tc = 25 c tc = 25c 0.05 0.2 0.1 0.5 d = 1 0.01 0.02 1 shot pulse 0.01 1 0.1 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 7.2c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 tc = 25c pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 100 0.01 0.02 1 shot pulse
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 8 of 9 apr 19, 2012 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
rjh60d1dpp-m0 preliminary r07ds0158ej0400 rev.4.00 page 9 of 9 apr 19, 2012 package dimension unit: mm p revious c od e pr ss0003 af- a t o -22 0 f l mass[t y p. ] 1.5 g ? rene s a s c od e jeita packa g e code packa g e nam e t o -22 0 f l 3.6 0.3 15.0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part no. quantity shipping container rjh60d1dpp-m0#t2 600 pcs box (tube)
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